Low resistance and transparent Ag/AZO ohmic contact to p-GaN
AbstractSilver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electronbeam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out...
View ArticleLeakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor...
AbstractInN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At...
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